|
Producent: |
onsemi |
| Produktkategori: | MOSFET |
|
Technology: |
Si |
|
Monteringsstil: |
Gennem hul |
|
Pakke/etui: |
TO-220-3 |
|
Transistor Polarity: |
N-Channel |
|
Antal kanaler: |
1 kanal |
|
Vds – Drain-Source Breakdown Voltage: |
650 V |
|
Id – Continuous Drain Current: |
19 A |
|
Rds On – Drain-Source Resistance: |
165 mOhms |
|
Vgs – Gate-Source Voltage: |
– 30 V, + 30 V |
|
Vgs th – Gate-Source Threshold Voltage: |
4.5 V |
|
Qg – Gate Charge: |
35 nC |
|
Minimum driftstemperatur: |
– 55 C |
|
Maksimal driftstemperatur: |
+ 150 C |
|
Pd – Power Dissipation: |
35 W |
|
Channel Mode: |
Enhancement |
|
Serie: |
FCPF165N65S3L1-F154 |
| Brand: | onsemi |
| Configuration: | Single |
| Fall Time: | 16 ns |
| Produkttype: | MOSFET |
| Rise Time: | 21 ns |
| Fabrikspakke Antal: | 1000 |
| Underkategori: | MOSFETs |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 55 ns |
| Typical Turn-On Delay Time: | 18 ns |
FCPF165N65S3L1-F154
Produktets egenskaber
|
Producent: |
onsemi |
|
Pakke/etui: |
TO-220-3 |
|
Antal kanaler: |
1 kanal |
|
Serie: |
FCPF165N65S3L1-F154 |
| Produkttype: | MOSFET |
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Anmeldelser
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