Producent: |
Texas Instruments |
Produktkategori: | MOSFET |
REACH – SVHC: | |
Technology: |
Si |
Monteringsstil: |
SMD/SMT |
Pakke/etui: |
LSON-CLIP-8 |
Transistor Polarity: |
N-Channel |
Antal kanaler: |
2 kanal |
Vds – Drain-Source Breakdown Voltage: |
25 V |
Id – Continuous Drain Current: |
4.5 A |
Rds On – Drain-Source Resistance: |
– |
Vgs – Gate-Source Voltage: |
– 5 V, + 5 V |
Vgs th – Gate-Source Threshold Voltage: |
2.1 V, 1.6 V |
Qg – Gate Charge: |
6.2 nC, 12 nC |
Minimum driftstemperatur: |
– 55 C |
Maksimal driftstemperatur: |
+ 150 C |
Pd – Power Dissipation: |
6 W |
Channel Mode: |
Enhancement |
Handelsnavn: |
NexFET |
Serie: |
CSD86330Q3D |
Emballage: |
Spole |
Emballage: |
Klip tape |
Emballage: |
MouseReel |
Brand: | Texas Instruments |
Configuration: | Dual |
Udviklingssæt: | CSD86330EVM-717, TPS40322EVM-679 |
Fall Time: | 1.9 ns, 4.2 ns |
Forward Transconductance – Min: | 52 S, 82 S |
Højde: | 1,5 mm |
Længde: | 3.3 mm |
Produkttype: | MOSFET |
Rise Time: | 7.5 ns, 6.3 ns |
Fabrikspakke Antal: | 2500 |
Underkategori: | MOSFETs |
Transistor Type: | 2 N-Channel |
Typical Turn-Off Delay Time: | 8.5 ns, 15.8 ns |
Typical Turn-On Delay Time: | 4.9 ns, 5.3 ns |
Bredde: | 3.3 mm |
Enhedsvægt: | 0.002254 oz |
CSD86330Q3D
Produktets egenskaber
Producent: |
Texas Instruments |
Pakke/etui: |
LSON-CLIP-8 |
Antal kanaler: |
2 kanal |
Serie: |
CSD86330Q3D |
Produkttype: | MOSFET |
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