|
Producent: |
NXP |
| Produktkategori: | RF Bipolar Transistors |
|
Serie: |
BFU730F |
|
Transistor Type: |
Bipolar Wideband |
|
Technology: |
SiGe |
|
Transistor Polarity: |
NPN |
|
Operating Frequency: |
55 GHz |
|
DC Collector/Base Gain hfe Min: |
205 |
|
Collector- Emitter Voltage VCEO Max: |
2.8 V |
|
Emitter- Base Voltage VEBO: |
1 V |
|
Continuous Collector Current: |
5 mA |
|
Maksimal driftstemperatur: |
+ 150 C |
|
Configuration: |
Single |
|
Monteringsstil: |
SMD/SMT |
|
Pakke/etui: |
SOT-343F-4 |
|
Emballage: |
Spole |
|
Emballage: |
Klip tape |
|
Emballage: |
MouseReel |
| Brand: | NXP Semiconductors |
| Collector- Base Voltage VCBO: | 10 V |
| DC Current Gain hFE Max: | 555 |
| Højde: | 0.75 mm |
| Længde: | 2.2 mm |
| Maximum DC Collector Current: | 30 mA |
| Pd – Power Dissipation: | 197 mW |
| Produkttype: | RF Bipolar Transistors |
| Fabrikspakke Antal: | 3000 |
| Underkategori: | Transistorer |
| Type: | RF Silicon Germanium |
| Bredde: | 1.35 mm |
| Del # Aliasser: | 934064614115 |
| Enhedsvægt: | 0.000235 oz |
BFU730F,115
Produktets egenskaber
|
Producent: |
NXP |
|
Serie: |
BFU730F |
|
Pakke/etui: |
SOT-343F-4 |
| Produkttype: | RF Bipolar Transistors |
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