Producent: |
NXP |
Produktkategori: | RF Bipolar Transistors |
Serie: |
BFU550W |
Transistor Type: |
Bipolar Wideband |
Technology: |
Si |
Transistor Polarity: |
NPN |
Operating Frequency: |
11 GHz |
DC Collector/Base Gain hfe Min: |
60 |
Collector- Emitter Voltage VCEO Max: |
12 V |
Emitter- Base Voltage VEBO: |
2 V |
Continuous Collector Current: |
50 mA |
Minimum driftstemperatur: |
- 40 C |
Maksimal driftstemperatur: |
+ 150 C |
Configuration: |
Single |
Monteringsstil: |
SMD/SMT |
Pakke/etui: |
SOT-323-3 |
Emballage: |
Spole |
Emballage: |
Klip tape |
Emballage: |
MouseReel |
Brand: | NXP Semiconductors |
Collector- Base Voltage VCBO: | 24 V |
DC Current Gain hFE Max: | 200 |
Gain Bandwidth Product fT: | 11 GHz |
Højde: | 1.1 mm |
Længde: | 2.2 mm |
Maximum DC Collector Current: | 80 mA |
Operating Temperature Range: | – 40 C to + 150 C |
Output Power: | 13.5 dBm |
Pd – Power Dissipation: | 450 mW |
Produkttype: | RF Bipolar Transistors |
Fabrikspakke Antal: | 3000 |
Underkategori: | Transistorer |
Type: | Wideband RF Transistor |
Bredde: | 1.35 mm |
Del # Aliasser: | 934067695115 |
Enhedsvægt: | 0.000196 oz |
BFU550WX
Produktets egenskaber
Producent: |
NXP |
Serie: |
BFU550W |
Pakke/etui: |
SOT-323-3 |
Produkttype: | RF Bipolar Transistors |
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