|
Producent: |
NXP |
| Produktkategori: | RF Bipolar Transistors |
|
Serie: |
BFU530 |
|
Transistor Type: |
Bipolar Wideband |
|
Technology: |
Si |
|
Transistor Polarity: |
NPN |
|
Operating Frequency: |
11 GHz |
|
DC Collector/Base Gain hfe Min: |
60 |
|
Collector- Emitter Voltage VCEO Max: |
12 V |
|
Emitter- Base Voltage VEBO: |
2 V |
|
Continuous Collector Current: |
40 mA |
|
Minimum driftstemperatur: |
- 40 C |
|
Maksimal driftstemperatur: |
+ 150 C |
|
Configuration: |
Single |
|
Monteringsstil: |
SMD/SMT |
|
Pakke/etui: |
SOT-143B-4 |
|
Emballage: |
Spole |
|
Emballage: |
Klip tape |
| Brand: | NXP Semiconductors |
| Maximum DC Collector Current: | 65 mA |
| Output Power: | 10 dBm |
| Pd – Power Dissipation: | 450 mW |
| Produkttype: | RF Bipolar Transistors |
| Fabrikspakke Antal: | 10000 |
| Underkategori: | Transistorer |
| Del # Aliasser: | 934067703235 |
| Enhedsvægt: | 0.000314 oz |
BFU530VL
Produktets egenskaber
|
Producent: |
NXP |
|
Serie: |
BFU530 |
|
Pakke/etui: |
SOT-143B-4 |
| Produkttype: | RF Bipolar Transistors |
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