Producent: |
Texas Instruments |
Produktkategori: | MOSFET |
Technology: |
Si |
Monteringsstil: |
SMD/SMT |
Pakke/etui: |
WSON-FET-6 |
Transistor Polarity: |
N-Channel |
Antal kanaler: |
1 kanal |
Vds – Drain-Source Breakdown Voltage: |
100 V |
Id – Continuous Drain Current: |
14.4 A |
Rds On – Drain-Source Resistance: |
59 mOhms |
Vgs – Gate-Source Voltage: |
– 20 V, + 20 V |
Vgs th – Gate-Source Threshold Voltage: |
3.2 V |
Qg – Gate Charge: |
4.3 nC |
Minimum driftstemperatur: |
– 55 C |
Maksimal driftstemperatur: |
+ 150 C |
Pd – Power Dissipation: |
2.5 W |
Channel Mode: |
Enhancement |
Handelsnavn: |
NexFET |
Serie: |
CSD19538Q2 |
Emballage: |
Spole |
Emballage: |
Klip tape |
Emballage: |
MouseReel |
Brand: | Texas Instruments |
Configuration: | Single |
Fall Time: | 2 ns |
Højde: | 0.75 mm |
Længde: | 2 mm |
Produkttype: | MOSFET |
Rise Time: | 3 ns |
Fabrikspakke Antal: | 250 |
Underkategori: | MOSFETs |
Typical Turn-Off Delay Time: | 7 ns |
Typical Turn-On Delay Time: | 5 ns |
Bredde: | 2 mm |
Enhedsvægt: | 0.000208 oz |
CSD19538Q2T
Produktets egenskaber
Producent: |
Texas Instruments |
Pakke/etui: |
WSON-FET-6 |
Antal kanaler: |
1 kanal |
Serie: |
CSD19538Q2 |
Produkttype: | MOSFET |
Anmeldelser
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