|
Producent: |
Texas Instruments |
| Produktkategori: | MOSFET |
|
Technology: |
Si |
|
Monteringsstil: |
SMD/SMT |
|
Pakke/etui: |
VSONP-8 |
|
Transistor Polarity: |
N-Channel |
|
Antal kanaler: |
1 kanal |
|
Vds – Drain-Source Breakdown Voltage: |
30 V |
|
Id – Continuous Drain Current: |
83 A |
|
Rds On – Drain-Source Resistance: |
4.8 mOhms |
|
Vgs – Gate-Source Voltage: |
– 20 V, + 20 V |
|
Vgs th – Gate-Source Threshold Voltage: |
1.1 V |
|
Qg – Gate Charge: |
27 nC |
|
Minimum driftstemperatur: |
– 55 C |
|
Maksimal driftstemperatur: |
+ 150 C |
|
Pd – Power Dissipation: |
53 W |
|
Channel Mode: |
Enhancement |
|
Handelsnavn: |
NexFET |
|
Serie: |
CSD17577Q3A |
|
Emballage: |
Spole |
|
Emballage: |
Klip tape |
|
Emballage: |
MouseReel |
| Brand: | Texas Instruments |
| Configuration: | Single |
| Fall Time: | 4 ns |
| Forward Transconductance – Min: | 76 S |
| Højde: | 0.9 mm |
| Længde: | 3.15 mm |
| Produkttype: | MOSFET |
| Rise Time: | 31 ns |
| Fabrikspakke Antal: | 2500 |
| Underkategori: | MOSFETs |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 20 ns |
| Typical Turn-On Delay Time: | 4 ns |
| Bredde: | 3 mm |
| Enhedsvægt: | 0.000977 oz |
CSD17577Q3A
Produktets egenskaber
|
Producent: |
Texas Instruments |
|
Pakke/etui: |
VSONP-8 |
|
Antal kanaler: |
1 kanal |
|
Serie: |
CSD17577Q3A |
| Produkttype: | MOSFET |
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