|
Producent: |
Analog Devices Inc. |
| Produktkategori: | RF Bipolar Transistors |
|
Serie: |
MAX2601 |
|
Transistor Type: |
Bipolar Power |
|
Technology: |
Si |
|
Transistor Polarity: |
NPN |
|
Operating Frequency: |
900 MHz |
|
DC Collector/Base Gain hfe Min: |
100 |
|
Collector- Emitter Voltage VCEO Max: |
17 V |
|
Emitter- Base Voltage VEBO: |
2.3 V |
|
Continuous Collector Current: |
200 mA |
|
Minimum driftstemperatur: |
- 40 C |
|
Maksimal driftstemperatur: |
+ 85 C |
|
Configuration: |
Single |
|
Monteringsstil: |
SMD/SMT |
|
Pakke/etui: |
SOIC-8 |
|
Emballage: |
Rør |
| Brand: | Analoge enheder / Maxim Integrated |
| Højde: | 1.58 mm |
| Længde: | 4.98 mm |
| Maximum DC Collector Current: | 1.2 A |
| Operating Temperature Range: | – 40 C to + 85 C |
| Output Power: | 1 W |
| Pd – Power Dissipation: | 6.4 W |
| Produkttype: | RF Bipolar Transistors |
| Fabrikspakke Antal: | 100 |
| Underkategori: | Transistorer |
| Type: | RF Bipolar Power |
| Bredde: | 3.99 mm |
| Del # Aliasser: | MAX2601 |
| Enhedsvægt: | 0,019048 oz |
MAX2601ESA+
Produktets egenskaber
|
Producent: |
Analog Devices Inc. |
|
Serie: |
MAX2601 |
|
Pakke/etui: |
SOIC-8 |
| Produkttype: | RF Bipolar Transistors |
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