NVH4L060N065SC1

Produktets egenskaber

Producent:
 onsemi
Pakke/etui:
 TO-247-4
Antal kanaler:
 1 kanal
Serie:
 NVH4L060N065SC1
Produkttype: MOSFET

 

Kategori:
Producent:
 onsemi
Produktkategori: MOSFET
REACH – SVHC:
Technology:
 SiC
Monteringsstil:
 Gennem hul
Pakke/etui:
 TO-247-4
Transistor Polarity:
 N-Channel
Antal kanaler:
 1 kanal
Vds – Drain-Source Breakdown Voltage:
 650 V
Id – Continuous Drain Current:
 47 A
Rds On – Drain-Source Resistance:
 70 mOhms
Vgs – Gate-Source Voltage:
 – 8 V, + 22 V
Vgs th – Gate-Source Threshold Voltage:
 4.3 V
Qg – Gate Charge:
 74 nC
Minimum driftstemperatur:
 – 55 C
Maksimal driftstemperatur:
 + 175 C
Pd – Power Dissipation:
 176 W
Channel Mode:
 Enhancement
Handelsnavn:
 EliteSiC
Serie:
 NVH4L060N065SC1
Emballage:
 Rør
Brand: onsemi
Configuration: Single
Fall Time: 11 ns
Forward Transconductance – Min: 12 S
Produkttype: MOSFET
Rise Time: 14 ns
Fabrikspakke Antal: 450
Underkategori: MOSFETs
Typical Turn-Off Delay Time: 24 ns
Typical Turn-On Delay Time: 11 ns

NVH4L060N065SC1 Silicon Carbide (SiC) MOSFETs

onsemi NVH4L060N065SC1 Silicon Carbide (SiC) MOSFETs provide superior switching performance and higher reliability than Silicon. The onsemi NVH4L060N065SC1 features low ON resistance, and the compact chip size ensures low capacitance and gate charge. System benefits include high efficiency, fast operation frequency, increased power density, reduced EMI, and reduced system size.

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