STL260N4LF7

Výrobce:	STMicroelectronics
Kategorie výrobků:	MOSFET
Technika:	Si
Způsob montáže:	SMD/SMT
Balení / pouzdro:	PowerFLAT5x6-8
Transistor Polarity:	N-Channel
Počet kanálů:	1 kanál
Vds – Drain-Source Breakdown Voltage:	40 V
Id – Continuous Drain Current:	120 A
Rds On – Drain-Source Resistance:	1.1 mOhms
Vgs – Gate-Source Voltage:	– 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage:	2.5 V
Qg – Gate Charge:	42 nC
Minimální provozní teplota:	– 55 C
Maximální provozní teplota:	+ 175 C
Pd – Power Dissipation:	188 W
Channel Mode:	Enhancement
Balení:	Naviják
Balení:	Střihací páska
Balení:	MouseReel
Značka:	STMicroelectronics
Fall Time:	23 ns
Typ výrobku: Dřevěné obaly na boty:	MOSFET
Rise Time:	14 ns
Tovární balení Množství:	3000
Podkategorie:	MOSFETs
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	74 ns
Typical Turn-On Delay Time:	21 ns
Hmotnost jednotky:	0.002681 oz

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Standard Products

STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discretes, and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models, and simulation tools, are available to make adding to a design-in easy.

Silicon Carbide Power MOSFETs

STMicroelectronics Silicon Carbide Power MOSFETs bring wide bandgap materials’ advanced efficiency and reliability to a broader range of energy-conscious applications. These applications include inverters for electric/hybrid vehicles, solar or wind power generation, high-efficiency drives, power supplies, and smart-grid equipment. An extended voltage range from 650V to 1700V features excellent switching performance combined with very low on-state resistance R_DS(on) per area Figure Of Merit. ST SiC MOSFETs allow the design of more efficient and compact systems. ST’s 1200V SiC MOSFETs exhibit an outstanding temperature rating of 200°C for improved thermal design of power electronics systems. Compared to silicon MOSFET, SiC MOSFET also features significantly reduced switching losses with minimal variation versus the temperature.

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STL260N4LF7

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Standard Products

Silicon Carbide Power MOSFETs

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