CSD18504Q5A

Výrobce:	Texas Instruments
Kategorie výrobků:	MOSFET
REACH – SVHC:
Technika:	Si
Způsob montáže:	SMD/SMT
Balení / pouzdro:	VSONP-8
Transistor Polarity:	N-Channel
Počet kanálů:	1 kanál
Vds – Drain-Source Breakdown Voltage:	40 V
Id – Continuous Drain Current:	50 A
Rds On – Drain-Source Resistance:	6.6 mOhms
Vgs – Gate-Source Voltage:	– 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage:	1.5 V
Qg – Gate Charge:	16 nC
Minimální provozní teplota:	– 55 C
Maximální provozní teplota:	+ 150 C
Pd – Power Dissipation:	77 W
Channel Mode:	Enhancement
Jméno výrobku:	NexFET
Série:	CSD18504Q5A
Balení:	Naviják
Balení:	Střihací páska
Balení:	MouseReel
Značka:	Texas Instruments
Configuration:	Single
Vývojová sada:	EM1402EVM
Fall Time:	2 ns
Výška:	1 mm
Délka:	6 mm
Typ výrobku: Dřevěné obaly na boty:	MOSFET
Rise Time:	6.8 ns
Tovární balení Množství:	2500
Podkategorie:	MOSFETs
Transistor Type:	1 N-Channel Power MOSFET
Typical Turn-Off Delay Time:	12 ns
Typical Turn-On Delay Time:	3.2 ns
Šířka:	4.9 mm
Hmotnost jednotky:	0,000847 oz

Více informací

CSD1850xQ5A 40V N-Channel NexFET Power MOSFETs

Texas Instruments CSD1850xQ5A devices are 40V N-Channel NexFET Power MOSFETs that are designed to minimize losses in power conversion applications. TI CSD18501Q5A features R_DS(ON) Max @ VGS=4.5V of 4.3mΩ and R_DS(ON) Max @ VGS=10V of 3.2mΩ while CSD18503Q5A features R_DS(ON) Max @ VGS=4.5V of 6.2mΩ and R_DS(ON) Max @ VGS=10V of 4.3mΩ. CSD18504Q5A features R_DS(ON) Max @ VGS=4.5V of 9.8mΩ and R_DS(ON) Max @ VGS=10V of 6.6mΩ. Texas Instruments CSD1850xQ5A 40V N-channel NexFET Power MOSFETs are ideal for use in DC-DC conversion, secondary side synchronous rectifier, and battery motor control applications.

NexFET N-Channel Power MOSFETs

Texas Instruments NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra-low Qg and Qd and low thermal resistance. The Texas Instruments NexFET N-Channel Power MOSFETs are avalanche rated and come in a SON 5mm x 6mm plastic package.

TI N-Channel 8-23-12

NexFET™ Power MOSFETs

Texas Instruments NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. Texas Instruments NexFET Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.

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