A3G26D055NT4

A3G26D055N Airfast® RF Power GaN Transistor

NXP Semiconductors A3G26D055N Airfast® RF Power GaN (Gallium Nitride) Transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability. This 8W symmetrical Doherty RF transistor provides a wide frequency range from 100MHz to 2690MHz. The device offers an 18db power gain (typical) at 2675MHz with 54.1% efficiency. The A3G26D055N also features high terminal impedances and a highly linearized Error Vector Magnitude (EVM), making it optimal for massive MIMO active antenna systems for 5G base stations.