CSD17507Q5A

Výrobce:	Texas Instruments
Kategorie výrobků:	MOSFET
REACH – SVHC:
Technika:	Si
Způsob montáže:	SMD/SMT
Balení / pouzdro:	VSONP-8
Transistor Polarity:	N-Channel
Počet kanálů:	1 kanál
Vds – Drain-Source Breakdown Voltage:	30 V
Id – Continuous Drain Current:	100 A
Rds On – Drain-Source Resistance:	16.1 mOhms
Vgs – Gate-Source Voltage:	– 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage:	1.6 V
Qg – Gate Charge:	2.8 nC
Minimální provozní teplota:	– 55 C
Maximální provozní teplota:	+ 150 C
Pd – Power Dissipation:	3 W
Channel Mode:	Enhancement
Jméno výrobku:	NexFET
Série:	CSD17507Q5A
Balení:	Naviják
Balení:	Střihací páska
Balení:	MouseReel
Značka:	Texas Instruments
Configuration:	Single
Forward Transconductance – Min:	16 S
Výška:	1 mm
Délka:	6 mm
Typ výrobku: Dřevěné obaly na boty:	MOSFET
Tovární balení Množství:	2500
Podkategorie:	MOSFETs
Transistor Type:	1 N-Channel
Šířka:	4.9 mm
Hmotnost jednotky:	0.002952 oz

Více informací

NexFET N-Channel Power MOSFETs

Texas Instruments NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra-low Qg and Qd and low thermal resistance. The Texas Instruments NexFET N-Channel Power MOSFETs are avalanche rated and come in a SON 5mm x 6mm plastic package.

TI N-Channel 8-23-12

NexFET™ Power MOSFETs

Texas Instruments NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. Texas Instruments NexFET Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.

CSD17507Q5A 30V N-Channel NexFET™ Power MOSFET

Texas Instruments CSD17507Q5A 30V N-Channel NexFET™ Power MOSFET has been designed to minimize losses in power conversion applications. The device features ultra-low Q_g and Q_gd, low-thermal resistance, and they are avalanche rated. The Texas Instruments CSD17507Q5A is ideal for Point-of-Load synchronous buck in networking, telecom, and computing systems and is optimized for control FET applications.

CSD17507Q5A NexFET™ Power MOSFETs

Texas Instruments CSD17507Q5A N-channel NexFET™ power MOSFETs are 30V devices deisgned to minimize losses in power conversion applications. TI CSD17507Q5A NexFET power MOSFETs feature low thermal resistance as well as ultralow gate charge totla (Qg) and gate charge gate to drain (Qgd). The TI CSD17507Q5A has a 1.6V threshold voltage. These TI NexFET power MOSFETs are optimized for control FET applications and are also ideal for point-of-load synchronous buck in networking, telecom, and computing systems.

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