MSC080SMA120B

Свойства на продукта

Производител:
 Микрочип
Опаковка / калъф:
 TO-247-3
Брой на каналите:
 1 канал
Тип на продукта: MOSFET

 

Категория:
Производител:
 Микрочип
Категория продукти: MOSFET
Technology:
 SiC
Стил на монтиране:
 През дупката
Опаковка / калъф:
 TO-247-3
Transistor Polarity:
 N-Channel
Брой на каналите:
 1 канал
Vds – Drain-Source Breakdown Voltage:
 1.2 kV
Id – Continuous Drain Current:
 37 A
Rds On – Drain-Source Resistance:
 100 mOhms
Vgs – Gate-Source Voltage:
 – 10 V, + 23 V
Vgs th – Gate-Source Threshold Voltage:
 1.8 V
Qg – Gate Charge:
 64 nC
Минимална работна температура:
 – 55 C
Максимална работна температура:
 + 175 C
Pd – Power Dissipation:
 200 W
Channel Mode:
 Enhancement
Опаковка:
 Тръба
Марка: Микрочипова технология
Configuration: Неженен
Тип на продукта: MOSFET
Фабрична опаковка Количество: 30
Подкатегория: MOSFETs
Тегло на единицата: 0.211644 oz

Silicon Carbide (SiC) Semiconductors

Microchip Technology Silicon Carbide (SiC) Semiconductors are an innovative option for power electronic designers looking to improve system efficiency, smaller form factor, and higher operating temperature in products covering industrial, medical, military/aerospace, aviation, and communication market segments. Microchip’s next-generation SiC MOSFETs and SiC Schottky Barrier Diodes (SBDs) are designed with high repetitive Unclamped Inductive Switching (UIS) capability, and its SiC MOSFETs maintain high UIS capability at approximately 10J/cm2 to 15J/cm2 and robust short-circuit protection at 3ms to 5ms. The Microchip Technology SiC SBDs are designed with balanced surge current, forward voltage, thermal resistance, and thermal capacitance ratings at low reverse current for lower switching loss. In addition, SiC MOSFET and SiC SBD die can be paired together for use in modules.

Silicon Carbide (SiC) MOSFETs

Microchip Technology Silicon Carbide (SiC) MOSFETs offer superior dynamic and thermal performance over conventional Silicon (Si) power MOSFETs. These MOSFETs have low capacitances, low gate charge, fast switching speed, and good avalanche ruggedness. The SiC MOSFETs can stabilize operation at 175°C high junction temperature. These MOSFETs provide high efficiency with low switching losses. The SiC MOSFETs do not require any freewheeling diodes. Typical applications include smart grid transmission and distribution, induction heating and welding, and power supply and distribution.

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